Photovoltaic Effect in a-Si/c-Si Heterostructure Prepared by RF Magnetron Sputtering Technique

Abstract

AbstractPhotosensitivity spectral dependencies of the a-Si(n-type)/c-Si(p-type) heterostructure for the different reverse biases, Vb, amorphous Si film thickness, substrate predeposition temperatures, Ts, and annealing conditions, Ta, were investigated in the wavelengths range of 500–1200 nm It was found that the position of the relative photosensitivity maximum depends on Ts, and Vb and can be varied in the wavelengths range of 840–1080 nm. The energy band diagram of the heterostructure was analyzed to explain the observed results. It was shown that the photosensitivity properties of the a-Si/c-Si heterostructure depend on the interfacial condition. The perspective application of the structures investigated is IR detector fabrication.