Abstract
ABSTRACTThe analysis contains an engineering method for the prediction of thermally induced stresses in single- and multilayered heteroepitaxial structures on a thick substrate. The examined stresses include 1) normal stresses acting in the film layers themselves and responsible for their ultimate and fatigue strength, and 2) interfacial stresses responsible for film blistering and peeling. The developed formulas are simple, visible, easy-to-use, and clearly indicate how material and structural characteristics affect the magnitude and the distribution of stresses and deflections. Some recommendations for smaller stresses in film structures are presented. The obtained results can be utilized as a guidance for an optimal physical design of multilayered heteroepitaxial structures used in Microelectronics.
Publisher
Springer Science and Business Media LLC
Cited by
19 articles.
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