Author:
Harris J. S.,Koch S. M.,Rosner S. J.
Abstract
ABSTRACTSubstantial progress has been realized in both understanding the nucleation and growth of GaAs/Si and demonstration of device application of this technology. In this paper, we review the recent progress in the role of the Si surface, initial nucleation, the GaAs/Si interface, GaAs thick layer growth and defect generation and control in the GaAs layer. This last area is the remaining area where substantial progress is still required. Several new approaches for defect control are discussed.
Publisher
Springer Science and Business Media LLC
Reference62 articles.
1. Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping Control
2. 30. Bringans R. D. , Olmstead M. A. , Uhrberg R.I.G. and Bachrach R.Z. , in Proc. 18th Intern. Conf. on the Physics of Semiconductors Stockholm 1986.
3. 7. Dapkus P. D. , Dupuis R. D. , Yingling R. D. , Yang J. J. , Simpson W. I. , Moudy L. A. , Johnson R. E. , Campbell A. G. , Manasevit H. M. and Ruth R. P. , Thirteenth IEEE Photovoltaic Specialists Conf., 1978, p. 960–965.
4. Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films
5. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献