Monitoring of the Surface Species on Silicon After Chemical Cleaning by FTIR Spectroscopy

Abstract

ABSTRACTFor the analysis of as-cleaned surface, we have used a the unique IR method that uses a highsurface-area porous sample. We have observed by experiments that the oxide growth rate on silicon is reduced to a minimum when the surface is treated with a proper amount of HF vapor obtained from 1% I-IF solution. FTIR and XPS observations of the treated surface suggest that the oxide growth rate is closely related to the amount of the surface fluorides. In UV/O2 cleaning process, we have observed experimentally that addition of water vapor to cleaning gas stream enhances the cleaning efficiency by as much as 1.3 times.