Author:
Zou Y. L.,Alford T. L.,Adams D.,Laursen T.,Tu K.-N.,Morton R.,Lau S. S.
Abstract
AbstractAg/Ti bilayer films deposited on silicon dioxide substrates were annealed in ammonia ambient in the temperature range of 400 - 600 °C. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) have shown that Ti segregates to both the surface to form a TiN(O) layer and to the Ti/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The annealed bilayer structure had minimal Ti accumulations in Ag. Resistivity values of ˜2 μΩ-cm were obtained in encapsulated Ag bilayer films, which are comparable to that of the as-deposited. X-ray analysis confirmed the absence of intermetallic phase transformation.
Publisher
Springer Science and Business Media LLC
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