A room-temperature electrical field–controlled magnetic memory cell

Abstract

We present a method that allows changing the anisotropy and the magnetic characteristics of piezoelectric–ferromagnetic hybrid structures by electric fields, thereby suppressing the need for external or local magnetic fields. We have investigated the magnetic properties of single Co50Fe50 and CoFe80B20 magnetostrictive thin films as well as of high-quality bottom-pinned spin valves (SV) sputtered on piezoelectric substrates [lead zirconate titanate (PZT)] and patterned in an interdigitated transducer (IDT). Induction of a uniaxial anisotropy axis and the changes on coercivity and switching fields as a function of the applied bias voltage on the IDT are analyzed and interpreted. The down-scalability of this hybrid method supports the possibility of achieving low-power/low-voltage control of the switching fields and shows the feasibility of a hybrid ferroelectric magnetic memory cell.