Low Temperature Pl Characterization of Lpee Grown GaSb and GaInAsSb Epilayers

Abstract

AbstractWe have investigated the low temperature (4.5 K) photoluminescence (PL) spectra of GaSb and GaInAsSb layers. The layers were grown by liquid phase electro-epitaxial (LPEE) technique. Several bound excitomc transitions were observed both in GaSb and GaInAsSb layers. Shift in the PL peak energy corresponding to the band to band transition with temperature was determined. The linear part of the shift above 100K, exhibited a slope of -0.3 meV/K.