Author:
Lund J. C.,Olschner F.,Ahmed F.,Shah K. S.
Abstract
ABSTRACTWe report on radiation detectors fabricated from boron phosphide (BP) layers. These devices were fabricated by growing 1 to 10 μm thick layers of BP by chemical vapor deposition (CVD) on (100) oriented n-type silicon substrates. Ohmic contacts were applied to the Si (Au-Sb). Schottky barrier contacts (also Au-Sb) were applied to the BP layer. The devices were tested as radiation detectors and were found to be capable of detecting individual 5.5 MeV alpha particles. With some improvements we hope to fabricate neutron detectors from these devices, making use of the very high cross-section of boron for thermal neutrons.
Publisher
Springer Science and Business Media LLC
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