Author:
Lund J. C.,Olschner F.,Ahmed F.,Shah K. S.
Abstract
ABSTRACTWe report on radiation detectors fabricated from boron phosphide (BP) layers. These devices were fabricated by growing 1 to 10 μm thick layers of BP by chemical vapor deposition (CVD) on (100) oriented n-type silicon substrates. Ohmic contacts were applied to the Si (Au-Sb). Schottky barrier contacts (also Au-Sb) were applied to the BP layer. The devices were tested as radiation detectors and were found to be capable of detecting individual 5.5 MeV alpha particles. With some improvements we hope to fabricate neutron detectors from these devices, making use of the very high cross-section of boron for thermal neutrons.
Publisher
Springer Science and Business Media LLC
Reference10 articles.
1. Indium phosphide particle detectors
2. 9. Kim C.J. and Shono K. , Deviation from Stoichiometry of Boron Monophosphide, J. Electrochem. Soc.: Solid-State Science and Technology, p. 120, January (1984).
3. Thermal neutron irradiation experiments on 10BP single-crystal wafers
4. Crystal Growth Of Thick Layers of Boron Phosphide;Kumashiro;J. Crystal Growth,1984
5. Blue‐band emission in LiInS2crystals
Cited by
28 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献