A Comparison of the Degradation and Annealing Kinetics in Amorphous Silicon and Amorphous Silicon-Germaniumsolar Cells-Reference-Cited by-同舟云学术

A Comparison of the Degradation and Annealing Kinetics in Amorphous Silicon and Amorphous Silicon-Germaniumsolar Cells

Published:1999 Issue: Volume:557 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Carlson D. E.,Chen L. F.,Ganguly G.,Lin G.,Middya A. R.,Crandall R. S.,Reedy R.

Abstract

AbstractThe degradation and annealing kinetics of both a-Si:H and a-SiGe:H single-junction solar cells were investigated under varying conditions. In every case, the kinetics associated with degradation and annealing were slower for a-SiGe:H cells than for a-Si:H cells. Since deuterium diffusion studies indicate that the hydrogen in our a-SiGe:H films diffuses more slowly than that in the a-Si:H films, hydrogen motion may play a role in determining both the degradation and annealing kinetics of the devices.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference10 articles.

1. Effect of the i-Layer Optical Gap on the Light-Induced Degradation of a-SiGe Solar Cells

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4. The reversal of light-induced degradation in amorphous silicon solar cells by an electric field

5. Reversible conductivity changes in discharge‐produced amorphous Si

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