High dielectric constant and small temperature coefficient bismuth-based dielectric compositions

Abstract

We have studied the crystal structure and the dielectric properties of a scries of Bi-based ceramic compositions as a function of compositional variation and sintering temperature. These dielectrics have dielectric constants hetween 70 and 165 and their temperature coefficients are within ±500 × 10−6/°C. The precise temperature coefficient can be controlled via compositional changes such that dielectrics with temperature coefficients within ±50 × 10−6/°C are easily obtainable. The room temperature dissipation factor is smaller than 0.001 or equivalently, the Q value is greater than 1000. The electrical resistivity is greater than 1014 ohm-cm. Furthermore, these dielectrics are sinterable below 960 °C, rendering it possible to use silver or high silver metallization as the internal electrode in making the multilayer ceramic capacitors.