Growth of diamond films and characterization by Raman, scanning electron microscopy, and x-ray photoelectron spectroscopy

Abstract

We have deposited diamond films on Si〈111〉 using hot filament assisted chemical vapor deposition at low pressures ∼25 Torr. Diamond films deposited at different relative concentrations of methane (ranging from 0.25% to 2.0%) in methane-hydrogen mixtures have been characterized by Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy. With varying methane concentration, Raman spectra show features characteristic of crystalline diamond, diamond-like carbon, and polycrystalline graphite. Scanning electron micrographs show densely packed diamond crystallites. SEM measurements made on diamond films grown as a function of time show that the median grain size of the diamond crystallites increases linearly with time during the initial phase of the growth. X-ray photoelectron spectroscopy reveals differences between the diamond sp3 covalent bonding and sp2 graphitic bonding as well as the extent of s-p hybridization as a function of methane concentration. The plasmon loss shoulder, characteristic of graphite, is absent from the spectrum of 0.25% methane concentration film. But it appears in the XPS spectra of films grown at higher concentrations.