Vanadium Oxide Based RRAM Device
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1557/adv.2017.442.pdf
Reference5 articles.
1. Wong, H.-S.P., et al.,Metal–oxide RRAM. Proceedings of the IEEE, 2012.100(6): p. 1951–1970
2. Semenov, A.E., I.N. Borodina, and S.H. GarofaliniIn Situ Deposition and Ultrahigh Vacuum STM/AFM Study of V2O5 / Li3 PO4 Interface in a Rechargeable Lithium-Ion Battery. Journal of The Electrochemical Society, 2001.148(11): p. A1239–A1246
3. Cheah, Y.L., V. Aravindan, and S. Madhavi,Electrochemical Lithium Insertion Behavior of Combustion Synthesized V2O5 Cathodes for Lithium-Ion Batteries. Journal of The Electrochemical Society, 2012.159(3): p. A273–A280
4. Wan, Z., R.B. Darling, and M. Anantram,Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film. Physical Chemistry Chemical Physics, 2015.17(45): p. 30248–30254
5. Tuna, O., et al.,High quality ITO thin films grown by dc and RF sputtering without oxygen. Journal of Physics D: Applied Physics, 2010.43(5): p. 055402
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