Author:
McGinn J. T.,Hoffman D. M.,Thomas, III J. H.,Tams III F. J.
Abstract
ABSTRACTThis paper reports upon a new technique for the formation of epitaxial Pd2Si on (100) silicon using thin predeposited titanium layers. Improvements in the quality of epitaxy in Pd2Si on {111} silicon by this technique will also be shown. A preliminary model for the formation of epitaxy will be given. Discrepancies between this model and results in the literature will be discussed and experiments suggested to resolve the uncertainties.
Publisher
Springer Science and Business Media LLC
Reference25 articles.
1. Dislocation morphology in graded heterojunctions: GaAs1?xPx
2. [22] Thomas III J.H. , Hoffman D. , McGinn J.T. , and Tams III F. , To be published in J. Amer. Vac. Soc.
3. [21] Hoffman D. , McGinn J.T. , Thomas III J.H. , and Tams III F. , To be published in J. Amer. Vac. Soc.
4. Direct observation of epitaxial islands of Pd2Si on (001) Si
5. An X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces
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