Control of direct crystallization by a running magnetic field

Author:

Karabanov Sergey M.ORCID,Suvorov Dmitry V.,Tarabrin Dmitriy Y.,Slivkin Evgeny V.,Karabanov Andrey S.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. F. Shimura, Single-crystal silicon: growth and properties, in Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. ed. by S. Kasap, P. Capper (Springer, Cham, 2017)

2. G.M.M. Gaspar, A. Autruffe, J.M. Pó, Silicon growth technologies for PV applications, new research on silicon - structure, properties. Technology (2017). https://doi.org/10.5772/intechopen.68351

3. K. Kakimoto, Crystallization of silicon by a directional solidification method, in Crystal Growth of Si for Solar Cells. Advances in Materials Research, vol. 14, ed. by K. Nakajima, N. Usami (Springer, Berlin, 2009)

4. P. Rudolph, K. Kakimoto, Crystal growth from the melt under external force fields. MRS Bull. 34, 251–258 (2009). https://doi.org/10.1557/mrs2009.75

5. P. Rudolph, Travelling magnetic fields applied to bulk crystal growth from the melt: the step from basic research to industrial scale. J. Cryst. Growth 310, 1298–1306 (2008). https://doi.org/10.1016/j.jcrysgro.2007.11.036

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