Introducing the Purion H200™ single wafer high current implanter
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://link.springer.com/content/pdf/10.1557/s43580-022-00412-1.pdf
Reference3 articles.
1. B. Vanderberg, P. Heres, E. Eisner, B. Libby, J. Valinski and W. Huff, Introducing Purion H, a scanned spot beam high current ion implanter, in 2014 20th International Conference on Ion Implantation Technology (IIT) (2014), pp. 1–4. https://doi.org/10.1109/IIT.2014.6940041
2. E. Eisner, J. David, P. Justesen, D. Kamenitsa, E. McIntyre, R. Rathmell, A. Ray, R. Rzeszut, Optima MDxt: A high throughput 335 keV mid-dose implanter. AIP Conf. Proc. 1496, 340 (2012). https://doi.org/10.1063/1.4766558
3. L. Rubin, J. Poate, Ion implantation in silicon technology. Ind. Phys. 9(3), 12–15 (2003)
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