Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and Si + GeSn surface layers formed by implantation with RTA or laser annealing using SIMS, XPS, TEM-EDX, XRD and Raman analysis-Reference-Cited by-同舟云学术

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Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and Si + GeSn surface layers formed by implantation with RTA or laser annealing using SIMS, XPS, TEM-EDX, XRD and Raman analysis

Published:2023-02-23 Issue:36 Volume:7 Page:1380-1389
ISSN:2059-8521
Container-title:MRS Advances
language:en
Short-container-title:MRS Advances

Author:

Borland John^ORCID,Komago Shota,Yokogawa Ryo,Yoshioka Kazutoshi,Sawamoto Naomi,Ogura Atsushi,Goodman Gary,Buyuklimanli Temel

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1557/s43580-023-00510-8.pdf

Reference13 articles.

1. A. Ogura, Mieji University, Private communications

2. A. Ogura et al., in SSDM-2011, Paper E-7-3, p. 933 (2011)

3. A. Ogura et al., in ECS Oct-2014 Meeting, Paper P7-1765 (2014)

4. J. Borland et al., in ECS Oct-2004 Meeting, PV 2004-07, p. 769 (2004)

5. J. Borland et al., (Epion/TEL) U. S. Patent US7,259,036 B2, 21 Aug 2007

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