Funder
HORIZON EUROPE Framework Programme
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. J.C. Zolper., Implantation doping of GaN, December 1, 1996. AIP Conference Proceedings: Journal Volume: 392; Journal Issue: 1; Conference: 14. International Conference on the Application of Accelerators in Research and Industry, Denton, TX (United States), 6–9 Nov 1996.
2. M. Takahashi, A. Tanaka, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, K. Shima, K. Kojima, S.F. Chichibu, Impact of high-temperature implantation of Mg ions into GaN. Jpn. J. Appl. Phys. 59(5), 056502 (2020)
3. O. Lupan, T. Pauporté, T. Le Bahers, B. Viana, I. Ciofini, Wavelength-emission tuning of ZnO nanowire-based light-emitting diodes by Cu doping: experimental and computational insights. Adv. Funct. Mater. 21(18), 3564–72 (2011)
4. Volker Häublein : Energetic Contamination in Al Implants. European Ion Implantation User group meeting n°59, IISB Erlangen, 12. April 2018