Gate dielectric material and process effects on distribution pattern of nano-resistors in solid-state incandescent light emitting devices-Reference-Cited by-同舟云学术

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Gate dielectric material and process effects on distribution pattern of nano-resistors in solid-state incandescent light emitting devices

Published:2022-04-19 Issue:15 Volume:7 Page:301-304
ISSN:2059-8521
Container-title:MRS Advances
language:en
Short-container-title:MRS Advances

Author:

Su Jia Quan,Kuo Yue^ORCID,Liu Po-Tsun

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1557/s43580-022-00276-5.pdf

Reference21 articles.

1. S.J. Jiao, Z.Z. Zhang, Y.M. Lu, D.Z. Shen, B. Yao, J.Y. Zhang, B.H. Li, D.X. Zhao, X.W. Fan, Z.K. Tang, Appl. Phys. Lett. 88, 1031911 (2006)

2. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995)

3. N. Holonyak, S.F. Bevacqua, Appl. Phys. Lett. 1, 82 (1962)

4. J.W. Precker, Eur. J. Phys. 28, 493 (2007)

5. T. Taguchi, I.E.E.J.T. Electr, Electr. 3, 21 (2008)

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