Development of Aluminum Gate Thin-Film Transistors Based on Aluminum Oxide Insulators

Abstract

ABSTRACTDevelopment of aluminum gate thin-film transistors (TFT) is described. This TFT is fabricated based on an aluminum oxide insulator technology, in which aluminum is anodically oxidized to form Al2O3. The use of aluminum is effective in reducing the delay of the gate busline of the display panels due to its low resistivity. The Al2O3 films formed by an anodic oxidation, block the growth of hillocks during TFT fabrication which is one of the biggest issues of aluminum metallization. With this technology it is possible to design and fabricate TFT/LCD panels larger than 30 inches and with more than 1000 scan lines.