Author:
Zhou Huimei,Li Zonglin,Huang Jian,Liu Jianlin
Abstract
ABSTRACTMetal/high-k dielectric core-shell nanocrystal (NC) memory capacitors were demonstrated by e-beam evaporation process. This kind of metal oxide semiconductor (MOS) memory shows good performance in charge storage, programming and erasing speeds. Compared to Co NC memory, Co/Al2O3 core-shell NC memory shows improved retention performance since the additional Al2O3 shell layer acts as a barrier, which prevent the leakage.
Publisher
Springer Science and Business Media LLC