Fabrication and Characteristics of Ferroelectric/Fluorescent Oxide Structures for Ferroelectrically Controlled Emission Devices

Abstract

ABSTRACTThe crystallinity, electrical, and optical properties of the ferroelectric/fluorescent oxide structures using sol-gel-derived (Ba0.6Sr0.4)TiO3 (BST) and (Sr0.8Eu0.2)Bi2.2Ta2O9 (Eu-SBT) grown on STO(110) single crystal substrates were introduced for the first time. In the present structures, the SBT films partly included a (116)-oriented Eu-SBT crystallite. The polarization vs. voltage characteristics of the BST/Eu-SBT structures showed the hysteresis loop caused by spontaneous polarization reversal, and then several emission peaks from Eu3+ ion were observed in a photoluminescence spectrum of a present BST/Eu-SBT structure.