Author:
Malta D. P.,Posthill J. B.,Humphreys T. P.,Thomas R. E.,Fountain G. G.,Rudder R. A.,Hudson G. C.,Mantini M. J.,Markunas R. J.
Abstract
ABSTRACTSecondary electron (SE) yield was enhanced by a factor of ∼30 and surface conductance increased up to 10 orders of magnitude when O-terminated or non-terminated natural diamond (100) surfaces were exposed to atomic H. The SE yield from atomic H-exposed surfaces was spatially dependent on near-surface microcrystalline perfection enabling defect-contrast imaging in the conventional SE mode of the scanning electron microscope (SEM). Ultraviolet photoelectron spectroscopy (UPS) on atomic H-exposed surfaces revealed an intense low energy peak attributed to photoexcitation of secondary electrons into unoccupied hydrogen-induced states near the conduction band edge and their subsequent escape into vacuum. The low energy photoemission peak, enhanced SE yield and enhanced surface conductivity were completely removed via high temperature annealing or exposure to atomic O creating the denuded or O-terminated surfaces, respectively.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. Argon and hydrogen plasma interactions on diamond (111) surfaces: Electronic states and structure
2. Chemical vapor deposition of diamond films from water vapor rf‐plasma discharges
3. Thermal desorption from hydrogenated and oxygenated diamond (100) surfaces
4. 4. Ramesham R. , Rose M.F. , Askew R.F. , Bekker T.L. , Dayton J.A. Jr , Krainsky I.L. , Mearini J. , Vanzant L. , File D.M. , Gilmour A.S. Jr ., and Ayres V. , Surface and Coatings Technology, in press.
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献