Morphological Features of the Solid-Liquid Interface of a Gallium Film

Abstract

ABSTRACTThis paper presents a new experimental method to investigate solid-liquid interface morphologies during Zone-Melting-Recrystallization at lower than the typical processing temperatures. Gallium films were used as a substitute for silicon films. In situ preliminary investigation identified three phenomena typically occurring during ZMR of silicon films: a) Transition from planar to dendritic to cellular morphologies was observed for different processing conditions; b) cell period proved to be dependant on scanning velocity; c) instabilities at the solidification interface at low heating strip temperatures were caused by supercooling and optical property variations as the material changed phase.