Kinetics of Explosive Crystallization Phenomena in Amorphous Silicon and Crystal Structure of the Layers Formed

Abstract

ABSTRACTSystematic relations are shown between the parameters controlling explosive crystallization in silicon (temperature, width of a liquid zone, and gradient of melt undercooling), the kinetics of the crystallization process, the predominance of preferential growth directions, and the crystal structure observed. Three typical regions of crystallization are found: (a) cellular growth of a laminated crystalline layer controlled by the formation of high densities of twins at a nearly plane liquid/solid interface, (b) cellular-dendritic growth of crystal lamellae characterized by branching of a curved interface, and (c) formation of a diffuse “slush zone” due to random nucleation in a-Si and grain growth in the liquid zone.