Author:
Atwater Harry A.,Tsai C. J.,Nikzad S.,Murty M.V.R.
Abstract
ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.
Publisher
Springer Science and Business Media LLC