Author:
Kim S.S.,Tsu D.V.,Lucovsky G.,Fountain G.G.,Markunas R.J.
Abstract
ABSTRACTThis paper describes the key process steps in the low temperature, <300ºC, formation of device quality Si/SiO2 interfaces employing oxide deposition by Remote Plasma-Enhanced Chemical Vapor-Deposition (Remote PECVD). The quality of the Si/SiO2 interface correlates with the degree of surface reconstruction that is controlled by ex-situ wet cleaning and in-situ Rapid Flash Heating. Electronic properties of the MOS structure also vary with the deposited oxide thickness, independent of the initial surface quality.
Publisher
Springer Science and Business Media LLC
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