Author:
Irvine Stuart J.C.,Hill H.,Hails J.E.,Pitt A.D.,Mullin J.B.
Abstract
ABSTRACTLaser-induced selected area epitaxy of CdTe thin films on GaAs substrates has been investigated and the role of vapour phase and surface reactions considered. Photo-enhanced growth rates of CdTe have been measured as a function of UV laser intensity and as a function of Cd to Te alkyl ratios. The growth rates are not simply determined by vapour phase photo-dissociation but also by a photolytic reaction on the surface. The latter enables good pattern definition where the growth rate is enhanced by the incident uv -radiation. The factors that determine the photo-enhancement are considered in the light of the Langmuir-Hinsheltwod model.
Publisher
Springer Science and Business Media LLC
Cited by
6 articles.
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