X-Ray Photoemission Investigation of Excimer Laser Induced Etching of InP

Abstract

ABSTRACTArF excimer laser induced etching of InP in various etch gases (HBr, HCI, CI2) is discussed with regard to its spatial resolution capability. X-ray photoemission spectra and large-area etch rate measurements published before lead to fundamental understanding and interpretation of the characteristics of etched test structures. HBr and HCI require gas phase photodissociation. CI2' in contrast, has the advantage to react spontaneously.