Author:
Johnson Stephen T.,Williams J.S.,Elliman R.G.,Pogany A.P.,Nygren E.,Olson G.L.
Abstract
ABSTRACTIn-situ time resolved reflectivity, Rutherford backscattering and channeling and transmission electron microscopy have been employed to characterise the evolution of Ar+ ion implantation damage in GaAs as a function of ion dose at various irradiation temperatures. Specific reflectivity signatures have been identified and characterised in terms of observed structural changes to the GaAs. Reflectivity provides a simple and convenient means of monitoring damage build up during ion implantation. In contrast to accepted models for amorphous phase formation in semiconductors, GaAs has been observed to undergo a sudden transformation from a crystal containing a dense network of extended defects to an amorphous phase under elevated temperature irradiation conditions.
Publisher
Springer Science and Business Media LLC
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