Elastic modulus of single-crystal GaN nanowires

Abstract

The deformation behavior of single-crystal GaN nanowires was studied by directly performing three-point bending tests on each individual nanowire in an atomic force microscope. The elastic modulus calculated from the load–displacement response of the nanowires was 43.9 ± 2.2 GPa. Single-crystal GaN nanowires investigated in this study were synthesized by chemical vapor deposition techniques based on the vapor–liquid–solid growth mechanism and had a diameter range from 60 to 110 nm. Crystalline GaN nanowires did not show obvious plastic deformation in bending and usually failed in a brittle manner.