Author:
Molnar B.,Wickenden A. E.,Rao M. V.
Abstract
AbstractHigh dose Si has been implanted into MOCVD grown high resistivity and n-type GaN in the 26–500°C temperature range. The implant activation varies widely (30 −>100%) depending on, what energy level is assigned to the Si, the implantation and annealing temperatures, and the quality of the substrate. The usable maximum temperature for activation is limited by the severe decomposition of the GaN. After 1050°C 15s RTA Ga liquid droplet formation has been observed by SEM. This decomposition changes the surface morphology but did not introduce measurable change in the electrical properties up to 1150°C /120s RTA.
Publisher
Springer Science and Business Media LLC
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