Author:
Liliental-Weber Zuzanna,Ruvimov S.,Suski T.,Ager J. W.,Swider W.,Chen Y.,Kisielowski Ch.,Washburn J.,Akasaki I.,Amano H.,Kuo C.,Imler W.
Abstract
AbstractThe influence of Si doping on the structure of GaN grown by metal-organic chemicalvapor deposition (MOCVD) has been studied using transmission electron microscopy (TEM), x-ray diffraction and Raman spectroscopy. Undoped and low Si doped samples were compared with samples of increased dopant concentration. In addition, defect reduction due to different buffer layers (AIN and GaN) is discussed. Silicon doping improves surface morphology and influences threading dislocation arrangement. High doping leads to a more random distribution of dislocations. Based on this study it appears (for the same dopant concentration) that an AIN buffer layer can significantly reduce the number of threading dislocations, leaving the samples more strained. However, no significant reduction of threading dislocations could be observed in the samples with GaN buffer layer. These samples are the least strained.
Publisher
Springer Science and Business Media LLC
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献