Boron Phosphide as a Refractory Semiconductor-Reference-Cited by-同舟云学术

Boron Phosphide as a Refractory Semiconductor

Published:1989 Issue: Volume:162 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kumashiro Y.,Hirabayashi M.,Takagi S.

Abstract

ABSTRACTThe crystal growth, characterization and various characteristics such as electrical, thermal and semiconducting properties of boron phosphide (BP) single crystalline wafers made by chemical vapor deposition technique are summrized. It is demonstrated that Schottky diode using single crystal and thermoelectric device employing sintered polycrystal are promising application for electronic materials.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference22 articles.

1. Schottky Barrier Diodes of n ‐ BP ‐ Au

2. Schottky barrier diodes using thick, well‐characterized boron phosphide wafers

3. Dielectric Constant and Refractive Index of Boron Monophosphide

4. Thermal Conductivity of III-V Compounds at High Temperatures

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