Ebic Investigation of Hydrogen Passivated Structural Defects in Efg Silicon Ribbon
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Published:1980
Issue:
Volume:2
Page:
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ISSN:0272-9172
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Container-title:MRS Proceedings
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language:en
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Short-container-title:MRS Proc.
Author:
Sullivan T. D.,AST D. G.
Abstract
ABSTRACTEBIC contrast of structural defects in as-received and hydrogen passivated polysilicon ribbon is studied using aluminum Schottky barrier diodes. Enhanced charge collection after passivation is demonstrated by comparing the EBIC signal from two sections of a split ribbon, one half of which was passivated. Electrical activity of specific linear defects before and after passivation is examined by recording charge collection profiles across these defects under standardized conditions of beam voltage and current. Such measurements show that passivation does reduce the electrical activity of selected defects. Possible reasons for this behavior will be discussed.
Publisher
Springer Science and Business Media LLC
Subject
General Engineering