Reactive ion Etching of Pt/PbZrxTi1−xO3/Pt Integrated Ferroelectric Capacitors-Reference-Cited by-同舟云学术

Reactive ion Etching of Pt/PbZrxTi1−xO3/Pt Integrated Ferroelectric Capacitors

Published:1993 Issue: Volume:310 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Van Glabbeek J.J.,Spierings G.A.C.M.,Ulenaers M.J.E.,Dormans G.J.M.,Larsen P.K.

Abstract

AbstractDry etching of a Pt/PbZrxTi1−xO3/Pt (Pt/PZT/Pt) ferroelectric capacitor stack with CF4/Ar plasmas with a reactive ion etching process for the fabrication of micrometer-sized integrated ferroelectric capacitors is described. The etch rate for both Pt and PZT is determined as a function of the process settings: Power, pressure and CF4-Ar gas flow ratio. A chemical enhancement of the etch rate is found for PZT. It is shown that it is possible to etch the Pt/PZT/Pt ferroelectric capacitor stack in a CF4/Ar plasma in a single lithographic process using patterning by photoresist masking. Redeposition processes occurring during etching are described.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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