Oriented Lead Zirconate Titanate thin Films: Characterization of Film Crystallization

Abstract

AbstractThrough systematic variation of film processing temperature and time, we have characterized the pyrochlore to perovskite crystallization process of solution-derived PZT 20/80 thin films. The ≈3000 Å thick films were prepared by spin deposition using <100> single crystal MgO as the film substrate. By controlled rapid thermal processing, films at different stages in the perovskite crystallization process were prepared with the tetragonal PZT 20/80 phase being <100>/<001> oriented relative to the MgO surface. An activation energy for the conversion process of 326 kJ/mole was determined by use of an Arrhenius expression using rate constants found by application of the method of Avrami. The activation energy for formation of the PZT 20/80 perovskite phase of the solution-derived films compared favorably with that calculated from data by Kwok and Desu [1] for sputter-deposited 3500 Å thick PZT 55/45 films. The similarity in activation energies indicates that the energetics of the conversion process is not strongly dependent on the method used for film deposition.