Photoemission Study of Low-Fluence, Non-Thermal Laser Damage of UHV-Cleaved Gallium Arsenide (110)

Abstract

AbstractThe pulsed-laser induced photochemical production of metallic Ga islands on the surface of GaAs cleaved, irradiated, and studied in ultrahigh vacuum (UHV) is documented through photoelectron spectroscopy and subsequent scanning electron microscopy. Ga islands are detected for laser fluences as low as 1 mJ/cm2, far below those previously reported for modification of GaAs, and for which the temperature rise is negligible.