Thermal Evolution of Rectifier Speed and Deep Levels in Irradiated Silicon

Abstract

ABSTRACTP+NN+ silicon rectifiers have been irradiated by protons and alpha particles. DLTS and reverse recovery time (the so called TRR) measurements were performed in both as-irradiated and annealed (400°C) samples. The evolution of implantation induced-centers with the annealing is not the same when using the two particles. For example, the concentration of the well known A center increases (decreases) with the annealing when protons (alpha particles) are used. On the other hand, the measurements of the TRR show that the rectifier speed decreases with the annealing in all cases studied.