Lattice Sites and Damage Annealing of Implanted Tm and Er IN Si

Abstract

ABSTRACTWe have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope 167mEr (2.27 s) which is the decay product of radioactive Tm 167m(9.25 d). Following 60 keV implantation of 167Tm at a dose of 4×1013 cm−2 and annealing at 600°C, more than 90% of 167mEr is found close to tetrahedral insterstitial(T) sites. The tetra-hedral fraction of 167mEr decreases considerably after 10min annealing at 800°C and above. We attribute this to the onset of diffusion of the parent 167Tm and its trapping at other defects, presumably oxygen atoms or clusters of Tm/Er.