Author:
Boyle Timothy J.,Clem Paul G.,Tuttle Bruce A.,Brennecka Geoffrey L.,Dawley Jeffrey T.,Rodriguez Mark A.,Dunbar Timothy D.,Hammetter William F.
Abstract
Lanthanide (Ln) doping of lead zirconate titanate (PLnZT 4/30/70) thin films was conducted to investigate effects on structural and electrical properties. Films were spin-coat deposited from precursor solutions made using a previously reported “basic route to PZT” chemistry. The remanent polarization (Pr), dielectric constant (ε), dielectric loss (tan δ), and lattice parameter values were obtained for each of the doped PLnZT films. Films doped with amphoteric cations (Tb, Dy, Y, and Ho) displayed high Pr values, square hysteresis loops, and enhanced fatigue resistance. Smaller radius Ln-doped films display an increased tendency toward (100) orientation in otherwise (111)-oriented films.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
34 articles.
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