Improvement of Thermal Stability of Metal/Oxide Interface for Electronic Devices

Abstract

ABSTRACTThe nano-meter controlled iron/iron-oxide multilayer materials have been successfully obtained by the pulse reactive sputtering method with high deposition rate. These multilayer demonstrated a good thermal stability of its structure and magnetic properties up to 500°C when a small amount of Si was doped in the structure, whereas the non-doped multilayer degraded at above 300°C. The difference of the oxidation energy between Fe and Si increases the thermal stability of the interface between Fe and Fe-O layer.