1. 12 Welser J. Hoyt J. L. Takagi S. Gibbons J. F. “Strain Dependence of the Performance Enhancement in Strained-Si n-MOSFETs”, Inter. Electron Devices Meeting 1994.
2. Reliability Analysis of Single Grain Si TFT using 2D Simulation;Baiano;Electrochemical Society Transactions,2008
3. New three-dimensional wafer bonding technology using the adhesive injection method;Matsumoto;Japanese Journal of Applied Physics Part 1-Regular Papers,1998
4. Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain
5. 19 Ishihara R. Tao C. He M. Deosarran P. Andel Y. van , Metselaar J. W. and Beenakker C. I. M. “Low-Temperature Deposition of High Quality SiO SiO2 by Inductively Coupled Plasma Enhanced CVD” to be published in Thin Solid Films.