Author:
Gonzalez Pilar,Lenci Silvia,Haspeslagh Luc,De Meyer Kristin,Witvrouw Ann
Abstract
AbstractIn this work, the electrical properties of heavily doped poly-SiGe deposited at temperatures compatible with MEMS integration on top of standard CMOS are reported. The properties studied are resistivity, temperature coefficient of resistance, noise, piezoresistivity, Hall mobility and effective carrier concentration. The obtained results prove the potential of using poly-SiGe as a sensing layer for MEMS-above-CMOS applications.
Publisher
Springer Science and Business Media LLC
Reference19 articles.
1. 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations
2. 1/ƒ noise is no surface effect
3. Piezoresistance in polysilicon
4. 12 Gonzalez P. , “Evaluation of Piezoresistivity and 1/f Noise of Polycrystalline SiGe for MEMS sensors applications”, Proceedings Eurosensors '08, pp. 881–884
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献