Author:
Bert N.A.,Chaldyshev V.V.,Goloshchapov S.I.,Kozyrev S.V.,Kunitsyn A.E.,Tretyakov V.V.,Veinger A.I.,Ivonin I.V.,Lavrentieva L.G.,Vilisova M.D.,Yakubenya M.P.,Lubyshev D.I.,Preobrazhenskii V.V.,Semyagin B.R.
Abstract
AbstractThe structure and properties of GaAs layers grown by molecular-beam epitaxy at low temperature (150-250 °C) have been studied. The samples were found to contain up to 1.5 at.% extra As, which formed nano-scale clusters under annealing. The dependences of the excessive As concentration and As-cluster size and density on the growth and annealing conditions were established. LT-GaAs layers were found to have high electrical resistivity, however, our investigations of microwave absorption in a weak magnetic field revealed a characteristic signal usually attributed to the superconducting phase. It has been proved that this microwave absorption is unlikely to be due to either the arsenic clusters in LT-GaAs films or indium in the substrate, as it was assumed previously. We suggest a new hypothesis that the superconducting phase in LT-GaAs is Ga nanoclusters formed on the growth surface.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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