To the Influence of the Wafer Edge in RTP

Author:

Zöllner Jens-Peter,Patzschke I.,Pietzuch V.,Pezoldt J.,Eichhorn G.

Abstract

ABSTRACTThe goal in Rapid Thermal Processing is the realization of homogeneous and stable temperature distribution across the wafer.Due to the wafer edge an additional heat loss occurs, which leads to temperature decrease near the wafer boundary. This can be the origin for layer thickness inhomogenities and defect generation. For successful compensation it is necessary to know why such a temperature gradient exists.The heat transfer at the wafer edge was investigated by using computer simulation.The results confirmed by experimental data in the pressure range of 1.. 760 Torr are discussed and criteria for the compensation of the temperature gradient near the wafer edge are developed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Rapid Thermal Processing;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

2. Improvement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processor;Journal of Crystal Growth;2000-07

3. On the Entrance Effects and the Influence of Buoyancy Forces on the Fluid Flow In Rtp Reactors;MRS Proceedings;1998

4. Wafer Temperature Measurement in RTP;Advances in Rapid Thermal and Integrated Processing;1996

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