Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy

Published:1997 Issue: Volume:482 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kimura A.,Sasaoka C.,Sakai A.,Usui A.

Abstract

AbstractWe investigated the growth conditions for enhancing epitaxial lateral overgrowth (ELO) of GaN stripes selectively grown by low-pressure metalorganic vapor phase epitaxy. The ELO was enhanced for GaN <1100> stripes and with a small trimethylgallium flow-rate. This tendency did not depend on mask materials. The cross-sectional shape of the GaN <1100> stripes was trapezoidal for SiO2 masks, and rectangular for silicon nitride (SiN2) masks in a certain growth condition. A low dislocation density in the ELO region was obtained not only for the SiO2 masks but also for the SiN2 masks.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

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