Fine Structure And Magnetooptics Of Excitonic Levels In Wurtzite GaN

Author:

Eckey L.,Hoffmann A.,Thurian P.,Broser I.,Meyer B. K.,Hiramatsu K.

Abstract

AbstractWe present a comprehensive study of the direct photoluminescence from excitonic states in GaN using polarization-dependent and magnetooptical measurements in fields up to 15 T. We measure and identify fine-structure splittings in the states n=l and n=2 of the A-exciton. The splitting between the energy levels of longitudinal and transverse states in the A-exciton is 0.96 meV. Emission from the spin triplet exciton in the state n=l is observed. We also identify emissions from three sublevels of the state n=2 of the A-exciton. From the analysis of our data we obtain the effective-mass parameters of electrons and holes, g-values and the Rydberg energy of the A-exciton.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors;Polarization Effects in Semiconductors;2008

2. Low field excitonic Zeeman splittings in gallium nitride;Solid State Communications;2002-10

3. Optical characterization of III-nitrides;Materials Science and Engineering: B;2002-05

4. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures;Journal of Physics: Condensed Matter;2002-03-22

5. Internal Structure of Free Excitons in GaN;physica status solidi (b);2001-11

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