On the creation of near-surface nitrogen-vacancy centre ensembles by implantation of type Ib diamond
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Published:2023-06-30
Issue:22
Volume:38
Page:4848-4857
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ISSN:0884-2914
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Container-title:Journal of Materials Research
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language:en
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Short-container-title:Journal of Materials Research
Author:
Healey A. J.ORCID, Scholten S. C., Nadarajah A., Singh Priya, Dontschuk N., Hollenberg L. C. L., Simpson D. A., Tetienne J.-P.
Abstract
AbstractDense, near-surface (within $$\sim 10$$
∼
10
nm) ensembles of nitrogen-vacancy (NV) centres in diamond are moving into prominence as the workhorse of many envisaged applications, from the imaging of fast-fluctuating magnetic signals to enacting nuclear hyperpolarisation. Unlike their bulk counterparts, near-surface ensembles suffer from charge stability issues and reduced formation efficiency due to proximity to the diamond surface. Here we examine the prospects for creating such ensembles by implanting nitrogen-rich type Ib diamond, aiming to exploit the high bulk nitrogen density to combat surface-induced band bending. This approach has previously been successful at creating deeper ensembles, however we find that in the near-surface regime there are fewer benefits over nitrogen implantation into pure diamond substrates. Our results suggest that control over diamond surface termination during annealing is key to successfully creating high-yield near-surface NV ensembles generally and implantation into type Ib diamond may be worth revisiting once that has been accomplished.
Graphical Abstract
Funder
Centre of Excellence for Quantum Computation and Communication Technology, Australian Research Council Australian Research Council University of Melbourne
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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