Author:
Barreau Nicolas,Tessier Mickael
Abstract
AbstractThe crystalline, optical and electrical properties of In2S3 containing copper thin films are investigated. Increasing the amount of copper within the In2S3 crystalline matrix yields reduced bandgap value and hindered conductivity. The films investigated being synthesized at low temperature (200 °C), it is likely they have similar properties as the materials formed at the CuIn1-xGaxSe2/In2S3 interface.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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