Author:
Rudder R.A.,Hattangady S.V.,Posthill J.B.,Markunas R.J.
Abstract
AbstractA low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.
Publisher
Springer Science and Business Media LLC
Reference5 articles.
1. 5 Rudder R.A. , Hattangady S.V. , Vitkavage D.J. , and Markunas R.J. , “Heteroepitaxial nucleation and growth of Ge on Si(100) surfaces using remote plasma enhanced chemical vapor deposition,” published in this proceedings.
2. In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition
3. Remote plasma‐enhanced chemical‐vapor deposition of epitaxial Ge films
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